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| SMD ESD Protection Diode SMD Diodes Specialist CPDH3V3UP RoHS Device Features IEC61000-4-2 (ESD) 15 kV(Contact),20kV(Air). Working voltage: 3.3V Low leakage current. Low operating and clamping voltages. 0.014(0.35) 0.010(0.25) 0.033(0.85) 0.030(0.75) SOD-523 0.051(1.30) 0.043(1.10) Mechanical data Case: SOD-523 standard package ,molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Mounting position: Any Weight: 0.0012 gram(approx.). 0.031(0.77) 0.020(0.51) 0.067(1.70) 0.059(1.50) 0.006(0.15) 0.003(0.08) 0.003(0.07) 0.001(0.01) 0.008(0.20) REF Circuit Diagram Dimensions in inches and (millimeter) Maximum Rating (at TA=25 C unless otherwise noted) O Parameter Peak pulse power ( tp = 8/20 us) Peak pulse current ( tp = 8/20 us) ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) Operating temperature Storage temperature O Symbol PPP IPP VESD Tj TSTG Value 40 5 20 15 -55 to +125 -55 to +125 Unit W A kV O C C O Electrical Characteristics (at TA=25 C unless otherwise noted) Parameter Reverse stand-off voltage Punch-through voltage Snap-back voltage Reverse leakage current IPT = 2uA ISB = 50mA VRWM = 3.3V IPP = 1 A, tp=8/20us Clamping voltage IPP = 5 A, tp=8/20us Reverse clamping voltage Junction capacitance IPPR = 1 A, tp=8/20us VR = 0 V, f = 1MHz VC VCR Cj 12 8.0 2.4 16 V V pF Conditions Symbol Min Typ Max Unit VRWM VPT VSB IR VC 3.5 2.8 0.05 0.5 5.5 3.3 V V V uA V REV:C QW-BP022 Page 1 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CPDH3V3UP) Fig. 1 - Non-repetitive max. peak pulse power vs. pulse time Max. peak pulse power-PPP(kW ) 1 Fig. 2 - Power rating derating curve 110 100 90 80 Power rating (%) 100 70 60 50 40 30 20 10 0.1 0.01 0.1 1 10 1000 0 0 25 50 75 100 O 125 150 Pulse duration-tp(us) Ambient temperature ( C ) Fig.3 - Clamping voltage vs. peak pulse current 16 14 10 12 Fig.4 - Forward voltage vs. Forward current Clamping voltage (V) Forward voltage (V) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 Waveform Parameters: tr=8us td=20us Waveform Parameters: tr=8us td=20us 8 6 4 2 0 0 1 2 3 4 5 6 Peak pulse current(A) Forward current(A) Fig.5 - Junction capacitance vs. reverse voltage 20 Normalized capacitance - Cj (pF) 16 12 8 4 0 0 1 2 3 4 Reverse voltage (V) REV:C QW-BP022 Page 2 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B P A W C C 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ..... .. 10 pitches (min) End Start Direction of Feed SYMBOL A 0.96 0.05 0.038 0.002 B 1.94 0.05 0.076 0.002 C 0.73 0.05 0.029 0.002 d 1.50 0.10 0.059 0.004 D 178 1 7.008 0.04 D1 54.4 0.4 2.142 0.016 D2 1.30 0.05 0.512 0.002 SOD-523 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 2.00 0.05 0.079 0.002 P0 4.00 0.10 0.157 0.004 P1 2.00 0.05 0.079 0.002 T 0.18 0.02 0.007 0.001 W 8.00 0.40 0.315 0.016 W1 12.3 0.20 0.484 0.008 SOD-523 (mm) (inch) REV:C QW-BP022 Page 3 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist Marking Code Part Number CPDH3V3UP Marking Code E3V3 E3V3 Suggested PAD Layout SOD-523 SIZE (mm) A B C D E 1.40 0.60 0.70 2.00 0.80 (inch) 0.055 0.024 0.028 C D A E 0.079 B 0.031 Standard Package Qty per Reel Case Type (Pcs) SOD-523 3000 Reel Size (inch) 7 REV:C QW-BP022 Page 4 Comchip Technology CO., LTD. |
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